The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2018
Filed:
Apr. 12, 2016
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Vladimir Machkaoutsan, Wezemaal, BE;
Stanley Seungchul Song, San Diego, CA (US);
Mustafa Badaroglu, Kessel-Lo, BE;
John Jianhong Zhu, San Diego, CA (US);
Junjing Bao, San Diego, CA (US);
Jeffrey Junhao Xu, San Diego, CA (US);
Da Yang, San Diego, CA (US);
Matthew Michael Nowak, San Diego, CA (US);
Choh Fei Yeap, San Diego, CA (US);
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 27/088 (2006.01); H01L 27/02 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 29/423 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/088 (2013.01); H01L 21/823418 (2013.01); H01L 21/823481 (2013.01); H01L 21/823487 (2013.01); H01L 21/823885 (2013.01); H01L 27/0207 (2013.01); H01L 27/0688 (2013.01); H01L 29/0649 (2013.01); H01L 29/0669 (2013.01); H01L 29/0676 (2013.01); H01L 29/42392 (2013.01);
Abstract
A device includes a substrate, a first nanowire field effect transistor (FET), and a second nanowire FET positioned between the substrate and the first nanowire FET. The device also includes a first nanowire electrically coupled to the first nanowire FET and to the second nanowire FET.