The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2018
Filed:
Oct. 24, 2013
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD, Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/58 (2006.01); H01L 23/528 (2006.01); H01L 23/522 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 23/585 (2013.01); H01L 23/522 (2013.01); H01L 23/5286 (2013.01); H01L 27/0207 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A method is disclosed that includes the operations outlined below. A plurality of dummy conductive cells that provide different densities are formed in a plurality of empty areas in a plurality of metal layers of a semiconductor device according to overlap conditions of the empty areas between each pair of neighboring metal layers.