The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2018
Filed:
Feb. 15, 2016
Applicant:
Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;
Inventors:
Shirou Ozaki, Yamato, JP;
Naoya Okamoto, Isehara, JP;
Assignee:
FUJITSU LIMITED, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 23/00 (2006.01); H01L 23/29 (2006.01); H01L 21/02 (2006.01); H02M 3/335 (2006.01); H03F 3/19 (2006.01); H03F 1/32 (2006.01); H03F 3/195 (2006.01); H01L 23/31 (2006.01); H02M 1/42 (2007.01); H02M 3/337 (2006.01);
U.S. Cl.
CPC ...
H01L 23/296 (2013.01); H01L 21/0217 (2013.01); H01L 21/02126 (2013.01); H01L 21/02164 (2013.01); H01L 21/02167 (2013.01); H01L 21/02321 (2013.01); H01L 21/02337 (2013.01); H01L 23/3171 (2013.01); H02M 3/33507 (2013.01); H03F 1/3247 (2013.01); H03F 3/19 (2013.01); H03F 3/195 (2013.01); H01L 23/3192 (2013.01); H02M 1/4225 (2013.01); H02M 3/337 (2013.01); Y02B 70/126 (2013.01);
Abstract
A compound semiconductor device includes a first protection film which covers a surface of a compound semiconductor layer, where the first protection film is an insulating film whose major constituent is Si and at least one element between N and O, and a hydrophobic layer containing Si—CHis formed at a surface thereof.