The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2018
Filed:
Aug. 28, 2015
Applicant:
Flosfia Inc., Kyoto-shi, Kyoto, JP;
Inventors:
Assignee:
FLOSFIA INC., Kyoto-shi, Kyoto, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 21/02 (2006.01); H01L 29/24 (2006.01); H01L 29/04 (2006.01); H01L 21/24 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02565 (2013.01); H01L 21/02628 (2013.01); H01L 21/242 (2013.01); H01L 29/04 (2013.01); H01L 29/24 (2013.01);
Abstract
A multilayer structure with excellent crystallinity and a semiconductor device of the multilayer structure with good mobility are provided. A multilayer structure includes: a corundum structured crystal substrate; and a crystalline film containing a corundum structured crystalline oxide as a major component, the film formed directly on the substrate or with another layer therebetween, wherein the crystal substrate has an off angle from 0.2° to 12.0°, and the crystalline oxide contains one or more metals selected from indium, aluminum, and gallium.