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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10043663 B1

PDFFull Text
Date of Patent:
Aug. 07, 2018

Filed:

Dec. 30, 2016

Enhanced defect reduction for heteroepitaxy by seed shape engineering

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Cheng-Wei Cheng, White Plains, NY (US);

David L. Rath, Stormville, NY (US);

Devendra K. Sadana, Pleasantville, NY (US);

Kuen-Ting Shiu, Yorktown Heights, NY (US);

Brent A. Wacaser, Putnam Valley, NY (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorneys:

Tutunjian & Bitetto, P.C.

Louis J. Percello

Primary Examiner:

Ngan Ngo

Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 21/02 (2006.01); C30B 23/02 (2006.01); C30B 25/18 (2006.01); C30B 25/04 (2006.01); C30B 23/04 (2006.01); C30B 29/40 (2006.01); C30B 29/52 (2006.01); H01L 29/66 (2006.01); H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0243 (2013.01); C30B 23/025 (2013.01); C30B 23/04 (2013.01); C30B 25/04 (2013.01); C30B 25/183 (2013.01); C30B 25/186 (2013.01); C30B 29/40 (2013.01); C30B 29/52 (2013.01); H01L 21/02378 (2013.01); H01L 21/02381 (2013.01); H01L 21/02389 (2013.01); H01L 21/02392 (2013.01); H01L 21/02395 (2013.01); H01L 21/02422 (2013.01); H01L 21/02425 (2013.01); H01L 21/02433 (2013.01); H01L 21/02461 (2013.01); H01L 21/02499 (2013.01); H01L 21/02532 (2013.01); H01L 21/02543 (2013.01); H01L 21/02546 (2013.01); H01L 21/02609 (2013.01); H01L 21/02636 (2013.01); H01L 21/02639 (2013.01); H01L 29/04 (2013.01); H01L 29/045 (2013.01); H01L 29/66795 (2013.01);
Abstract

A heteroepitaxially grown structure includes a substrate and a mask including a high aspect ratio trench formed on the substrate. A cavity is formed in the substrate having a shape with one or more surfaces and including a resistive neck region at an opening to the trench. A heteroepitaxially grown material is formed on the substrate and includes a first region in or near the cavity and a second region outside the first region wherein the second region contains fewer defects than the first region.

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