The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 07, 2018

Filed:

Jan. 30, 2017
Applicant:

SK Hynix Inc., Icheon-Si, KR;

Inventors:

Yang-Kon Kim, Icheon-si, KR;

Guk-Cheon Kim, Icheon-si, KR;

Ku-Youl Jung, Icheon-si, KR;

Jong-Koo Lim, Icheon-si, KR;

Won-Joon Choi, Icheon-si, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/08 (2006.01); H01L 43/10 (2006.01); G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G06F 3/061 (2013.01); G06F 3/0655 (2013.01); G06F 3/0679 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01);
Abstract

This technology provides an electronic device. An electronic device in accordance with an implementation of this document may include a semiconductor memory for storing data, and the semiconductor memory may include a free layer having a variable magnetization direction; a pinned layer having a pinned magnetization direction; a tunnel barrier layer interposed between the free layer and the pinned layer; and an interface enhancement layer interposed between the tunnel barrier layer and the pinned layer, wherein the interface enhancement layer may include an Fe-rich first layer; a Co-rich second layer formed over the first layer; and a metal layer formed over the second layer.


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