The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2018
Filed:
Aug. 24, 2017
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Yohann Frederic Michel Solaro, Singapore, SG;
Rudy Octavius Sihombing, Singapore, SG;
Tsung-Che Tsai, Singapore, SG;
Chai Ean Gill, Singapore, SG;
GLOBALFOUNDRIES SINGAPORE PTE. LTD., Singapore, SG;
Abstract
A method of forming a HV lateral PNP BJT with a pulled back isolation structure and a polysilicon gate covering a part of the NW+HVNDDD base region and a part of the collector extension (HVPDDD) and the resulting device are provided. Embodiments include forming a DVNWELL in a portion of a p-sub; forming a HVPDDD in a portion of the DVNWELL; forming a LVPW in a portion of the HVPDDD; forming a first and a second NW laterally separated in a portion of the DVNWELL, the first and second NW being laterally separated from the HVPDDD; forming a N+ base, a P+ emitter, and a P+ collector in an upper portion of the first and second NW and LVPW, respectively; forming a STI structure between the P+ emitter and P+ collector in a portion of the DVNWELL, HVPDDD, and LVPW, respectively; and forming a SAB layer over the STI structure.