The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2018
Filed:
May. 16, 2017
Applicant:
X-celeprint Limited, Cork, IE;
Inventors:
Rudi De Winter, Heusden-Zolder, BE;
Christopher Bower, Raleigh, NC (US);
Ronald S. Cok, Rochester, NY (US);
Matthew Meitl, Durham, NC (US);
Assignee:
X-Celeprint Limited, Cork, IE;
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 27/088 (2006.01); H01L 23/31 (2006.01); H01L 23/367 (2006.01); H01L 21/56 (2006.01); H01L 21/306 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0207 (2013.01); H01L 21/306 (2013.01); H01L 21/56 (2013.01); H01L 23/3107 (2013.01); H01L 23/367 (2013.01); H01L 24/24 (2013.01); H01L 24/82 (2013.01); H01L 27/088 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/18 (2013.01); H01L 2224/73267 (2013.01);
Abstract
Embodiments of the present invention provide a compound power transistor device including a first semiconductor substrate including a first semiconductor material, a second semiconductor substrate including a second semiconductor material different from the first semiconductor material, and a power transistor formed in or on the second semiconductor substrate. In certain embodiments, the second semiconductor substrate is micro-transfer printed on and secured to the first semiconductor substrate.