The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 31, 2018

Filed:

Mar. 29, 2017
Applicant:

Rohm and Haas Electronic Materials Cmp Holdings, Inc., Newark, DE (US);

Inventors:

Julia Kozhukh, Bear, DE (US);

Lee Melbourne Cook, Atglen, PA (US);

Michael E. Mills, Midland, MI (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/304 (2006.01); C09G 1/02 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); G03F 7/16 (2006.01); G03F 7/38 (2006.01); G03F 7/20 (2006.01); G03F 7/26 (2006.01);
U.S. Cl.
CPC ...
H01L 21/304 (2013.01); C09G 1/02 (2013.01); G03F 7/162 (2013.01); G03F 7/168 (2013.01); G03F 7/20 (2013.01); G03F 7/26 (2013.01); G03F 7/38 (2013.01); H01L 21/3081 (2013.01); H01L 21/31105 (2013.01); H01L 21/31144 (2013.01); H01L 21/3213 (2013.01); H01L 21/32139 (2013.01);
Abstract

The present invention provides methods for chemical mechanical polishing (CMP polishing) spin coated organic polymer films on a semiconductor wafer or substrate as part of lithography or as part of electronic packaging. The methods comprising spin coating an organic polymer liquid on a semiconductor wafer or substrate; at least partially curing the spin coating to form an organic polymer film; and, CMP polishing the organic polymer film with a polishing pad and an aqueous CMP polishing composition having a pH ranging from 1.5 to 4.5 and comprising elongated, bent or nodular silica particles containing one or more cationic nitrogen or phosphorus atoms, from 0.005 to 0.5 wt. %, based on total CMP polishing composition solids, of a sulfate group containing Cto Calkyl or alkenyl group surfactant, and a pH adjusting agent.


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