The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2018
Filed:
Jun. 30, 2016
Applicant:
Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;
Inventors:
Assignee:
FUJI ELECTRIC CO., LTD., Kawasaki-Shi, Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 21/04 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0485 (2013.01); H01L 29/1606 (2013.01); H01L 29/45 (2013.01); H01L 29/1608 (2013.01);
Abstract
A method of manufacturing a silicon carbide semiconductor device having a contact formed between a p-type silicon carbide semiconductor body and a metal electrode, includes forming on a surface of the p-type silicon carbide semiconductor body, a graphene layer so as to reduce a potential difference generated in a conjunction interface between the p-type silicon carbide semiconductor body and the metal electrode; forming an insulator layer comprising a hexagonal boron nitride on a surface of the graphene layer; and forming the metal electrode on a surface of the insulation layer.