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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10035978 B1

PDFFull Text
Date of Patent:
Jul. 31, 2018

Filed:

Apr. 20, 2015

Semiconductor element cleaning liquid and cleaning method

Applicant:

Mitsubishi Gas Chemical Company, Inc., Tokyo, JP;

Inventors:

Toshiyuki Oie, Tokyo, JP;

Kenji Shimada, Tokyo, JP;

Assignee:

MITSUBISHI GAS CHEMICAL COMPANY, INC., Tokyo, JP;

Attorney:

Greenblum & Bernstein, P.L.C.

Primary Examiner:

Gregory E Webb

Int. Cl.
CPC ...
C11D 7/06 (2006.01); C11D 11/00 (2006.01); H01L 21/304 (2006.01); B08B 3/08 (2006.01); C11D 7/32 (2006.01); C11D 7/50 (2006.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01); C11D 3/39 (2006.01); C11D 7/10 (2006.01); C11D 7/12 (2006.01);
U.S. Cl.
CPC ...
C11D 11/0047 (2013.01); B08B 3/08 (2013.01); C11D 3/3947 (2013.01); C11D 7/06 (2013.01); C11D 7/10 (2013.01); C11D 7/105 (2013.01); C11D 7/12 (2013.01); C11D 7/3209 (2013.01); C11D 7/5004 (2013.01); C11D 7/5009 (2013.01); C11D 7/5013 (2013.01); C11D 7/5022 (2013.01); H01L 21/02057 (2013.01); H01L 21/02063 (2013.01); H01L 21/02071 (2013.01); H01L 21/304 (2013.01); H01L 21/3065 (2013.01); H01L 21/3085 (2013.01);
Abstract

The present invention makes it possible to provide a semiconductor element cleaning method that is characterized in that: a hard mask pattern is formed on a substrate that has a low relative permittivity film and at least one of a cobalt, a cobalt alloy, or a tungsten plug; and a cleaning liquid that contains 0.001-20% by mass of an alkali metallic compound, 0.1-30% by mass of quaternary ammonium hydroxide, 0.01-60% by mass of a organic water-soluble solvent, 0.0001-0.1% by mass of hydrogen peroxide, and water is subsequently used on a semiconductor element in which, using the hard mask pattern as a mask, the hard mask, the low relative permittivity film, and a barrier insulating film are dry etched, and dry etch residues are removed.

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