The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2018
Filed:
Jan. 26, 2017
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Chun-Wen Cheng, Hsinchu County, TW;
Chia-Hua Chu, Hsinchu County, TW;
Fei-Lung Lai, New Taipei, TW;
Shiang-Chi Lin, Taoyuan, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
B81C 1/00 (2006.01); B81B 3/00 (2006.01); B81B 7/00 (2006.01); G01N 27/12 (2006.01);
U.S. Cl.
CPC ...
B81B 7/007 (2013.01); B81C 1/0015 (2013.01); B81C 1/00158 (2013.01); B81C 1/00182 (2013.01); B81C 1/00301 (2013.01); G01N 27/123 (2013.01); B81B 2201/0214 (2013.01); B81B 2203/0127 (2013.01); B81B 2203/0315 (2013.01); B81B 2203/04 (2013.01); B81B 2207/012 (2013.01); B81B 2207/07 (2013.01); B81C 2203/035 (2013.01); B81C 2203/0792 (2013.01);
Abstract
A semiconductor structure includes a substrate including a plurality of vias passing through the substrate and filled with a conductive or semiconductive material, and an oxide layer surrounding the conductive or semiconductive material, the substrate defining a cavity therein; a membrane disposed over the substrate and the cavity; a heater disposed within the membrane and electrically connected with the substrate; and a sensing electrode disposed over the membrane and the heater.