The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 24, 2018

Filed:

Mar. 26, 2017
Applicant:

Nxp Usa, Inc., Austin, TX (US);

Inventors:

Luv Pandey, Noida, IN;

Sanjoy Kumar Dey, Noida, IN;

Assignee:

NXP USA, INC., Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03M 1/06 (2006.01); H03M 1/00 (2006.01); H03K 17/16 (2006.01); H03M 1/38 (2006.01);
U.S. Cl.
CPC ...
H03M 1/002 (2013.01); H03K 17/161 (2013.01); H03M 1/38 (2013.01);
Abstract

In an analog-to-digital converter (ADC) having storage capacitors, active, top-plate, n-type, switch circuitry has an n-type transistor and gate-voltage control circuitry that generates the gate voltage to turn on and off the transistor. The control circuitry turns off the transistor by generating the gate voltage at a level that limits the gate-to-source voltage difference, thereby limiting GISL leakage current through the transistor that can otherwise jeopardize the accuracy of the ADC digital output value. In one implementation, when the transistor is to be off (for example, during the ADC conversion phase), the control circuitry generates the gate voltage to be at ground if the source voltage is below a reference voltage, and above ground if the source voltage is above the reference voltage. The switch circuitry can also be implemented using a p-type device or a transmission gate instead of the n-type device.


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