The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 24, 2018

Filed:

Nov. 11, 2016
Applicant:

Semiconductor Components Industries, Llc, Phoenix, AZ (US);

Inventors:

Ali Salih, Mesa, AZ (US);

Gordon M. Grivna, Mesa, AZ (US);

Daniel R. Heuttl, Gilbert, AZ (US);

Osamu Ishimaru, Chiyagawa, JP;

Thomas Keena, Gilbert, AZ (US);

Masafumi Uehara, Yorikido, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/49 (2006.01); H01L 29/861 (2006.01); H01L 29/06 (2006.01); H01L 29/41 (2006.01); H01L 29/45 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 27/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/861 (2013.01); H01L 27/0814 (2013.01); H01L 29/0623 (2013.01); H01L 29/0684 (2013.01); H01L 29/407 (2013.01); H01L 29/41 (2013.01); H01L 29/45 (2013.01); H01L 29/66136 (2013.01);
Abstract

A semiconductor device structure includes a region of semiconductor material with a first major surface and an opposing second major surface. A contact structure is disposed in a first portion of the region of semiconductor material and includes a tub structure extending from adjacent a first portion of the first major surface. A plurality of structures comprising portions of the region of semiconductor material extend outward from a lower surface of the tub structure. In some embodiments, the plurality of structures comprises a plurality of free-standing structures. A conductive material is disposed within the tub structure and laterally surrounding the plurality of structures. In one embodiment, the contact structure facilitates the fabrication of a monolithic series switching diode structure having a low-resistance substrate contact.


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