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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10032901 B1

PDFFull Text
Date of Patent:
Jul. 24, 2018

Filed:

Apr. 05, 2016

Semiconductor device with trench-like feed-throughs

Applicant:

Vishay-siliconix, Santa Clara, CA (US);

Inventors:

Deva Pattanayak, Saratoga, CA (US);

King Owyang, Atherton, CA (US);

Mohammed Kasem, Santa Clara, CA (US);

Kyle Terrill, Santa Clara, CA (US);

Reuven Katraro, Rishon Lezion, IL;

Kuo-In Chen, Los Altos, CA (US);

Calvin Choi, San Jose, CA (US);

Qufei Chen, San Jose, CA (US);

Ronald Wong, Millbrae, CA (US);

Kam Hong Lui, Santa Clara, CA (US);

Robert Xu, Fremont, CA (US);

Assignee:

Vishay-Siliconix, San Jose, CA (US);

Attorney:
Primary Examiner:

Jonathan Han

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/45 (2006.01); H01L 23/00 (2006.01); H01L 29/417 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7809 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/14 (2013.01); H01L 29/408 (2013.01); H01L 29/41766 (2013.01); H01L 29/45 (2013.01); H01L 29/66734 (2013.01); H01L 29/7813 (2013.01); H01L 29/456 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05 (2013.01); H01L 2224/05552 (2013.01); H01L 2224/05554 (2013.01); H01L 2224/06051 (2013.01); H01L 2224/13007 (2013.01); H01L 2224/13014 (2013.01); H01L 2224/13023 (2013.01); H01L 2224/13099 (2013.01); H01L 2924/014 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01074 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13091 (2013.01);
Abstract

A semiconductor device (e.g., a flip chip) includes a substrate layer that is separated from a drain contact by an intervening layer. Trench-like feed-through elements that pass through the intervening layer are used to electrically connect the drain contact and the substrate layer when the device is operated.

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