The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2018
Filed:
Jun. 01, 2016
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Jae-Yup Chung, Yongin-si, KR;
Hyun-Jo Kim, Seoul, KR;
Seong-Yul Park, Hwaseong-si, KR;
Se-Wan Park, Seoul, KR;
Jong-Mil Youn, Yongin-si, KR;
Jeong-Hyo Lee, Suwon-si, KR;
Hwa-Sung Rhee, Seongnam-si, KR;
Hee-Don Jeong, Hwaseong-si, KR;
Ji-Yong Ha, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;
Abstract
A semiconductor device includes a fin-type pattern including a first short side and a second short side opposed to each other, a first trench in contact with the first short side, a second trench in contact with the second short side, a first field insulating film in the first trench, the first field insulating film including a first portion and a second portion arranged sequentially from the first short side, and a height of the first portion being different from a height of the second portion, a second field insulating film in the second trench, and a first dummy gate on the first portion of the first field insulating film.