The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 24, 2018

Filed:

Jun. 29, 2016
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Hariklia Deligianni, Alpine, NJ (US);

Devendra K. Sadana, Pleasantville, NY (US);

Edmund J. Sprogis, Myrtle Beach, SC (US);

Naigang Wang, Ossining, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 25/065 (2006.01); H01L 27/092 (2006.01); H01L 21/8238 (2006.01); H01L 21/48 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); H01L 21/4853 (2013.01); H01L 21/8238 (2013.01); H01L 27/092 (2013.01); H01L 28/10 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06541 (2013.01);
Abstract

DC-DC power converters with GaN switches, magnetic inductors and CMOS power drivers integrated through face-to-face wafer bonding techniques are provided. In one aspect, an integrated DC-DC power converter includes: a Si CMOS chip having at least one Si CMOS transistor formed thereon; a GaN switch chip, bonded to the Si CMOS chip in a face-to-face manner, having at least one GaN transistor formed thereon; and an on-chip magnetic inductor present either on the Si CMOS chip or on the GaN switch chip. A method of forming an integrated DC-DC power converter is also provided.


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