The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2018
Filed:
Jun. 14, 2016
Infineon Technologies Ag, Neubiberg, DE;
Michael Roesner, Villach, AT;
Manfred Engelhardt, Villach-Landskron, AT;
Gudrun Stranzl, Goedersdorf, AT;
INFINEON TECHNOLOGIES AG, Neubiberg, DE;
Abstract
A method of forming a semiconductor device includes forming an active region in a first side of a silicon carbide substrate, the silicon carbide substrate having a second side opposite the first side and forming a contact pad at the first side. The contact pad is coupled to the active region. The method further includes forming an etch stop layer over the contact pad and plasma dicing the silicon carbide substrate from the second side. The plasma dicing etches through the silicon carbide substrate and stops on the etch stop layer. The diced silicon carbide substrate is held together by the etch stop layer. The diced silicon carbide substrate is attached on a carrier. The diced silicon carbide substrate is separated into silicon carbide dies by cleaving the etch stop layer.