The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 24, 2018

Filed:

Jun. 20, 2017
Applicant:

Taiwan Semiconductor Manufacturing, Co., Ltd., Hsinchu, TW;

Inventors:

Chien-Hua Huang, Miaoli County, TW;

Chung-Ju Lee, Hsinchu, TW;

Ming-Hui Weng, New Taipei, TW;

Tzu-Hui Wei, Zhubei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3086 (2013.01); H01L 21/3081 (2013.01);
Abstract

Methods of fabricating a semiconductor structure using a photoresist cross link process and a photoresist de-cross link process are described. A cross link bottom layer is employed during the fabricating process and the photoresist de-cross link process de-cross links the cross link bottom layer before the bottom layer is removed. The incorporation of the photoresist de-cross link process with the usage of the cross link bottom layer provides a cost effective and low defect level solution to fabricate the semiconductor structure.


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