The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 24, 2018

Filed:

Sep. 19, 2014
Applicant:

Hitachi Kokusai Electric Inc., Tokyo, JP;

Inventors:

Takaaki Noda, Toyama, JP;

Shingo Nohara, Toyama, JP;

Kosuke Takagi, Toyama, JP;

Takeo Hanashima, Toyama, JP;

Mamoru Sueyoshi, Toyama, JP;

Kotaro Konno, Toyama, JP;

Motoshi Sawada, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/02 (2006.01); C23C 16/40 (2006.01); C23C 16/458 (2006.01); C23C 16/452 (2006.01); C23C 16/455 (2006.01); C23C 16/44 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); C23C 16/401 (2013.01); C23C 16/4408 (2013.01); C23C 16/452 (2013.01); C23C 16/455 (2013.01); C23C 16/4587 (2013.01); C23C 16/45512 (2013.01); C23C 16/45544 (2013.01); H01L 21/02126 (2013.01); H01L 21/02164 (2013.01);
Abstract

A semiconductor device manufacturing method includes: vertically arranging and storing a plurality of substrates in a processing container and forming a condition where at least an upper region or a lower region relative to a substrate disposing region where the plurality of substrates are arranged is blocked off by an adaptor; and while maintaining the condition, forming films on the plurality of substrates by performing a cycle including the following steps a predetermined number of times in a non-simultaneous manner: supplying source gas to the plurality of substrates in the processing container from the side of the substrate disposing region; discharging the source gas from the interior of the processing container via exhaust piping; supplying reaction gas to the plurality of substrates in the processing container from the side of the substrate disposing region; and discharging the reaction gas from the interior of the processing container via the exhaust piping.


Find Patent Forward Citations

Loading…