logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10032490 B1

PDFFull Text
Date of Patent:
Jul. 24, 2018

Filed:

Oct. 10, 2016

Sense amplifier layout for finfet technology

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Yen-Huei Chen, Jhudong Township, TW;

Chien Chi Linus Tien, Hsinchu, TW;

Kao-Cheng Lin, Taipei, TW;

Jung-Hsuan Chen, Hsinchu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Attorney:

Duane Morris LLP

Primary Examiner:

Dinh T Le

Int. Cl.
CPC ...
G01R 19/00 (2006.01); G11C 7/06 (2006.01); H01L 21/28 (2006.01); G11C 11/419 (2006.01); H01L 21/8234 (2006.01); H01L 23/528 (2006.01); H01L 23/552 (2006.01); H01L 27/02 (2006.01); H01L 27/088 (2006.01); H01L 27/11 (2006.01); H01L 29/06 (2006.01); H01L 21/20 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
G11C 7/065 (2013.01); G11C 11/419 (2013.01); H01L 21/28008 (2013.01); H01L 21/823431 (2013.01); H01L 21/823475 (2013.01); H01L 23/528 (2013.01); H01L 23/552 (2013.01); H01L 27/0207 (2013.01); H01L 27/0296 (2013.01); H01L 27/0886 (2013.01); H01L 27/1104 (2013.01); H01L 29/0649 (2013.01); H01L 21/20 (2013.01); H01L 21/2003 (2013.01); H01L 27/0924 (2013.01);
Abstract

A sense amplifier (SA) comprises a semiconductor substrate having an oxide definition (OD) region, a pair of SA sensing devices, a SA enabling device, and a sense amplifier enabling signal (SAE) line for carrying an SAE signal. The pair of SA sensing devices have the same poly gate length Lg as the SA enabling device, and they all share the same OD region. When enabled, the SAE signal turns on the SA enabling device to discharge one of the pair of SA sensing devices for data read from the sense amplifier.

Find Patent Forward Citations

Loading…