The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 24, 2018

Filed:

Dec. 11, 2015
Applicant:

Sunedison Semiconductor Limited, St. Peters, MO (US);

Inventors:

Benno Orschel, St. Louis, MO (US);

Andrey Melnikov, Chesterfield, MO (US);

John F. Valley, Lake Oswego, OR (US);

Markus Jan Peter Siegert, Key West, FL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01B 11/30 (2006.01); G01B 9/02 (2006.01); G01B 11/24 (2006.01); G01N 21/95 (2006.01);
U.S. Cl.
CPC ...
G01B 9/02077 (2013.01); G01B 9/0201 (2013.01); G01B 9/02083 (2013.01); G01B 11/2441 (2013.01); G01N 21/9501 (2013.01);
Abstract

A method performs phase shift interferometry to detect irregularities of a surface of a wafer after the wafer has been placed into an interferometer and while the wafer is vibrating. Additionally, a system and a non-transitory computer-readable storage medium have computer-executable instructions embodied thereon for performing phase shift interferometry to detect irregularities of a surface of a wafer after the wafer has been placed into an interferometer and while the wafer is vibrating.


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