The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 17, 2018

Filed:

Jan. 12, 2017
Applicant:

Corning Incorporated, Corning, NY (US);

Inventors:

Darwin Gene Enicks, O'Fallon, MO (US);

Mingqian He, Horseheads, NY (US);

Robert George Manley, Vestal, NY (US);

Assignee:

Corning Incorporated, Corning, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 35/24 (2006.01); H01L 51/00 (2006.01); H01L 51/05 (2006.01); H01L 29/16 (2006.01); H01L 29/49 (2006.01); H03K 17/041 (2006.01);
U.S. Cl.
CPC ...
H01L 51/052 (2013.01); H01L 29/1606 (2013.01); H01L 29/4908 (2013.01); H01L 51/0554 (2013.01); H03K 17/04106 (2013.01); H01L 51/004 (2013.01); H01L 51/0036 (2013.01); H01L 51/0043 (2013.01); H01L 51/0047 (2013.01); H01L 51/0558 (2013.01);
Abstract

An organic thin film transistor comprising a first gate, a second gate, a semiconducting layer located between the first gate and second gate and configured to operate as a channel and a source electrode and a drain electrode connected to opposing sides of the semiconductor layer. The organic thin film transistor also comprises a first dielectric layer located between the first gate and the semiconducting layer in a direction of current flow through the semiconductor layer, the first dielectric layer comprising a polar elastomeric dielectric material that exhibits a double layer charging effect when a set voltage is applied to the first gate and a second dielectric layer located between the second gate and the semiconducting layer.


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