The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2018
Filed:
Aug. 04, 2014
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Rick L. Wise, Fairview, TX (US);
Hiroshi Yasuda, Plano, TX (US);
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/36 (2006.01); H01L 21/02 (2006.01); H01L 21/225 (2006.01); H01L 29/66 (2006.01); H01L 29/732 (2006.01); H01L 29/73 (2006.01);
U.S. Cl.
CPC ...
H01L 29/36 (2013.01); H01L 21/02063 (2013.01); H01L 21/2254 (2013.01); H01L 29/66242 (2013.01); H01L 29/66272 (2013.01); H01L 29/73 (2013.01); H01L 29/7325 (2013.01);
Abstract
An integrated circuit containing a bipolar transistor including an emitter diffused region with a peak doping density higher than 1·10atoms/cm, and an emitter-base junction less than 40 nanometers deep in a base layer. A process of forming the bipolar transistor, which includes forming an emitter dopant atom layer between a base layer and an emitter layer, followed by a flash or laser anneal step to diffuse dopant atoms from the emitter dopant atom layer into the base layer.