The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 17, 2018

Filed:

Jun. 26, 2017
Applicant:

Sandisk Technologies Llc, Plano, TX (US);

Inventors:

Yoichiro Tanaka, Yokkaichi, JP;

Yangyin Chen, Heverlee, BE;

Chu-Chen Fu, San Ramon, CA (US);

Christopher Petti, Mountain View, CA;

Assignee:

SANDISK TECHNOLOGIES LLC, Addison, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 47/00 (2006.01); H01L 27/24 (2006.01); H01L 45/00 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/249 (2013.01); G11C 13/004 (2013.01); G11C 13/0026 (2013.01); G11C 13/0038 (2013.01); G11C 13/0069 (2013.01); H01L 45/085 (2013.01); H01L 45/1233 (2013.01); H01L 45/1246 (2013.01); H01L 45/146 (2013.01); H01L 45/1683 (2013.01);
Abstract

Systems and methods for improving performance of a non-volatile memory that utilizes a Vacancy Modulated Conductive Oxide (VMCO) structure are described. The VMCO structure may include a layer of amorphous silicon (e.g., a Si barrier layer) and a layer titanium oxide (e.g., a TiO2 switching layer). In some cases, the VMCO structure or VMCO stack may use bulk switching or switching O-ion movements across an area of the VMCO structure, as opposed to switching locally in a constriction of vacancy formed filamentary path. A VMCO structure may be partially or fully embedded within a word line layer of a memory array.


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