The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2018
Filed:
Oct. 30, 2017
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Hui Zang, Guilderland, NY (US);
Jerome Ciavatti, Mechanicville, NY (US);
Josef Watts, Saratoga Springs, NY (US);
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10805 (2013.01); H01L 29/0649 (2013.01); H01L 27/10847 (2013.01);
Abstract
One illustrative DRAM structure disclosed herein includes a first memory cell pair, a second memory cell pair, a single diffusion break (SDB) isolation structure positioned between the first and second memory cell pairs, and a single first gate positioned between the first and second memory cell pairs and above the SDB isolation structure.
Zang, Hui. (2018). Dram structure with a single diffusion break (U.S. Patent No. 10026740). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10026740
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile