The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2018
Filed:
Dec. 15, 2016
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventor:
Han-Wen Liao, Taichung, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/687 (2006.01); H01L 21/67 (2006.01); H01J 37/32 (2006.01); C23C 16/50 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/68714 (2013.01); C23C 16/50 (2013.01); H01J 37/32009 (2013.01); H01J 37/32532 (2013.01); H01L 21/67069 (2013.01); H01J 2237/334 (2013.01); H01L 21/0262 (2013.01); H01L 21/02274 (2013.01); H01L 21/28556 (2013.01); H01L 21/3065 (2013.01); H01L 21/31116 (2013.01); H01L 21/31138 (2013.01); H01L 21/32136 (2013.01);
Abstract
A system is configured to perform plasma related fabrication processes. The system includes a process chamber and a wafer stage positioned within the process chamber. The wafer stage is configured to secure a process wafer. The system further includes a bottom electrode positioned beneath the wafer stage, a top electrode positioned external to the chamber, and a plasma distribution mechanism. The plasma distribution mechanism is reconfigurable to allow for more than one plasma distribution profile.