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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10026612 B1

PDFFull Text
Date of Patent:
Jul. 17, 2018

Filed:

Oct. 08, 2014

Method for producing group iii nitride crystal, group iii nitride crystal, semiconductor device and apparatus for producing group iii nitride crystal

Applicants:

Osaka University, Suita-shi, Osaka, JP;

Itochu Plastics Inc., Tokyo, JP;

Inventors:

Yusuke Mori, Osaka, JP;

Mamoru Imade, Osaka, JP;

Masashi Yoshimura, Osaka, JP;

Masashi Isemura, Tokyo, JP;

Assignees:

Osaka University, Osaka, JP;

Itochu Plastics Inc., Tokyo, JP;

Attorney:

Hamre, Schumann, Mueller & Larson, P.C.

Primary Examiner:

Robert M Kunemund

Int. Cl.
CPC ...
C30B 25/02 (2006.01); H01L 21/02 (2006.01); C30B 25/14 (2006.01); C23C 16/30 (2006.01); C23C 16/448 (2006.01); C30B 25/00 (2006.01); C30B 29/40 (2006.01); C23C 16/22 (2006.01); H01L 29/20 (2006.01); H01L 29/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02645 (2013.01); C23C 16/22 (2013.01); C23C 16/303 (2013.01); C23C 16/4488 (2013.01); C30B 25/00 (2013.01); C30B 25/02 (2013.01); C30B 25/14 (2013.01); C30B 29/403 (2013.01); H01L 21/0237 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02576 (2013.01); H01L 21/02639 (2013.01); H01L 29/2003 (2013.01); H01L 29/32 (2013.01);
Abstract

The present invention is intended to provide a method of producing a Group III nitride crystal that prevents a halogen-containing by-product from adversely affecting crystal generation and is superior in reactivity and operability. A method of producing a Group III nitride crystal includes a step of causing a Group III metal to react with an oxidizing gas and nitrogen-containing gas, thereby producing a Group III nitride crystal.

Find Patent Forward Citations

Mori, Yusuke. (2018). Method for producing group iii nitride crystal, group iii nitride crystal, semiconductor device and apparatus for producing group iii nitride crystal (U.S. Patent No. 10026612). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10026612

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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