The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 17, 2018

Filed:

Aug. 16, 2016
Applicant:

SK Hynix Inc., Icheon-si, Gyeonggi-do, KR;

Inventors:

Hee Youl Lee, Icheon-si, KR;

Hye Eun Heo, Yongin-si, KR;

Assignee:

SK hynix Inc., Icheon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/24 (2006.01); G11C 16/34 (2006.01); G11C 16/10 (2006.01); G11C 16/26 (2006.01); G11C 16/16 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3459 (2013.01); G11C 16/10 (2013.01); G11C 16/16 (2013.01); G11C 16/26 (2013.01);
Abstract

The present technique relates to an electronic device, and more particularly, to a semiconductor memory device and an operating method thereof. A semiconductor memory device having improved reliability includes an address decoder applying a program voltage to a selected word line coupled to selected memory cells, among the plurality of memory cells, and a read and write circuit applying a program permission voltage or a program inhibition voltage to bit lines coupled to the selected memory cells, and a control logic controlling the read and write circuit to sequentially apply the program permission voltage and the program inhibition voltage to the bit lines coupled to the selected memory cells when the program voltage is applied.


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