The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 17, 2018

Filed:

Aug. 18, 2016
Applicant:

Sandisk Technologies Llc, Plano, TX (US);

Inventors:

Phil Reusswig, Mountain View, CA (US);

Joanna Lai, San Jose, CA (US);

Deepak Raghu, San Jose, CA (US);

Grishma Shah, Milpitas, CA (US);

Nian Niles Yang, Mountain View, CA (US);

Assignee:

SANDISK TECHNOLOGIES LLC, Addison, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G06F 3/06 (2006.01); G06F 11/10 (2006.01); G11C 29/52 (2006.01); G11C 16/22 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3431 (2013.01); G06F 3/064 (2013.01); G06F 3/0619 (2013.01); G06F 3/0653 (2013.01); G06F 3/0685 (2013.01); G06F 11/1068 (2013.01); G11C 16/22 (2013.01); G11C 16/26 (2013.01); G11C 29/52 (2013.01);
Abstract

A non-volatile memory system includes technology for detecting read disturb in open blocks. In one embodiment, the system determines whether a particular block of non-volatile memory cells has been subjected to a minimum number of open block read operations and performs sensing operations for memory cells connected to an open word line of the particular block. The number of errors in the sensed data is determined. If the number of errors is greater than a limit, then the system takes an action to mitigate the read disturb.


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