The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 10, 2018

Filed:

Mar. 22, 2013
Applicant:

Koninklijke Philips N.v., Eindhoven, NL;

Inventors:

Jipu Lei, San Jose, CA (US);

Stefano Schiaffino, Pleasanton, CA (US);

Alexander H. Nickel, Santa Clara, CA (US);

Assignee:

Lumileds LLC, San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/52 (2010.01); H01L 33/32 (2010.01); H01L 33/62 (2010.01); H01L 21/683 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 33/00 (2010.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
H01L 33/52 (2013.01); H01L 21/561 (2013.01); H01L 21/6835 (2013.01); H01L 33/0025 (2013.01); H01L 33/0075 (2013.01); H01L 33/0079 (2013.01); H01L 33/32 (2013.01); H01L 33/387 (2013.01); H01L 33/62 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/83 (2013.01); H01L 24/94 (2013.01); H01L 33/007 (2013.01); H01L 33/382 (2013.01); H01L 2221/6835 (2013.01); H01L 2221/68377 (2013.01); H01L 2221/68381 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/29076 (2013.01); H01L 2224/29144 (2013.01); H01L 2224/29186 (2013.01); H01L 2224/32227 (2013.01); H01L 2224/32235 (2013.01); H01L 2224/83005 (2013.01); H01L 2224/83007 (2013.01); H01L 2224/83192 (2013.01); H01L 2224/83815 (2013.01); H01L 2224/94 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/12042 (2013.01); H01L 2933/005 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0066 (2013.01);
Abstract

A method according embodiments of the invention includes providing a wafer of semiconductor devices. The wafer of semiconductor devices includes a semiconductor structure comprising a light emitting layer sandwiched between an n-type region and a p-type region. The wafer of semiconductor devices further includes first and second metal contacts for each semiconductor device. Each first metal contact is in direct contact with the n-type region and each second metal contact is in direct contact with the p-type region. The method further includes forming a structure that seals the semiconductor structure of each semiconductor device. The wafer of semiconductor devices is attached to a wafer of support substrates.


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