The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2018
Filed:
Jan. 05, 2017
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Cheng-Ta Wu, Chiayi County, TW;
Chii-Ming Wu, Taipei, TW;
Shiu-Ko Jangjian, Tainan, TW;
Kun-Tzu Lin, Tainan, TW;
Lan-Fang Chang, Yunlin County, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 21/3115 (2006.01); H01L 21/8234 (2006.01); H01L 29/51 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/40 (2006.01); H01L 29/49 (2006.01); H01L 29/41 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7856 (2013.01); H01L 21/28158 (2013.01); H01L 21/3115 (2013.01); H01L 29/401 (2013.01); H01L 29/42364 (2013.01); H01L 29/495 (2013.01); H01L 29/512 (2013.01);
Abstract
A method of making a semiconductor device includes doping a first portion of an interlayer dielectric (ILD) with an oxygen-containing material, wherein the ILD is over a substrate. The method further includes doping a second portion of the ILD with a large species material. The second portion includes an area of the ILD below the first portion, and the second portion is separated from the substrate. The method further includes annealing the ILD.