The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2018
Filed:
Mar. 05, 2017
Sanken Electric Co., Ltd., Saitama, JP;
Hiromichi Kumakura, Saitama, JP;
Tomonori Hotate, Saitama, JP;
Hiroko Kawaguchi, Saitama, JP;
Hiroshi Shikauchi, Saitama, JP;
Ryohei Baba, Saitama, JP;
Yuki Tanaka, Saitama, JP;
Sanken Electric Co., Ltd., Saitama, JP;
Abstract
Provided is a highly reliable semiconductor device that uses a thick passivation layer. The protective film is formed so as to cover mostly the entire surface of a semiconductor substrate, and is open only in an area of part that is above a metal wiring layer (connection area). The passivation layer includes starting from the bottom side, a first silicon nitride film that includes silicon nitride (SiN), a silicon oxide film that includes silicon oxide (SiO), and an organic film (organic layer) that includes a polyimide. The silicon oxide film and organic film are formed so as to cover the electrode layer (metal wiring layer) except the top of the insulation layer and the connection area, however, the first silicon nitride film is formed only on the insulation layer and not formed on the electrode layer.