The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2018
Filed:
May. 18, 2016
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Huai-Ying Huang, Jhonghe, TW;
Jordan Hsu, Hsinchu, TW;
Tang-Hsuan Chung, Kaohsiung, TW;
Shau-Wei Lu, Taoyuan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A Static Random Access Memory (SRAM) Cell includes a first gate electrode layer covering a channel region of a read pull-down transistor, a second gate electrode layer covering channel regions of a first pull-down transistor and a first pull-up transistor, a third gate electrode layer covering a channel region of a second pass-gate transistor, a fourth gate electrode layer covering a channel region of a read pass-gate transistor, a fifth gate electrode layer covering a channel region of a first pass-gate transistor, and a sixth gate electrode layer covering channel regions of a second pull-down transistor and a second pull-up transistor. The first and second gate electrode layers are separated from each other by a first dielectric layer interposed therebetween, and are electrically connected to each other by a first interconnection layer formed thereon.