The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 10, 2018

Filed:

Jun. 07, 2016
Applicant:

Toyota Motor Engineering & Manufacturing North America, Inc., Erlanger, KY (US);

Inventors:

Yuji Fukuoka, Northville, MI (US);

Ercan M. Dede, Ann Arbor, MI (US);

Shailesh N. Joshi, Ann Arbor, MI (US);

Feng Zhou, South Lyon, MI (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 23/467 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01); H01L 23/367 (2006.01); H01L 23/373 (2006.01); H01L 23/473 (2006.01); H01L 23/00 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 23/467 (2013.01); H01L 23/3672 (2013.01); H01L 23/3677 (2013.01); H01L 23/3738 (2013.01); H01L 23/473 (2013.01); H01L 24/49 (2013.01); H01L 29/1602 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/41741 (2013.01); H01L 29/7395 (2013.01); H01L 29/7802 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48106 (2013.01); H01L 2224/48225 (2013.01); H01L 2924/1033 (2013.01); H01L 2924/10254 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/10323 (2013.01); H01L 2924/10325 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/1426 (2013.01);
Abstract

A power electronics assembly having a semiconductor device stack having a wide bandgap semiconductor device, a first electrode electrically coupled the wide bandgap semiconductor device, and a second electrode electrically coupled the wide bandgap semiconductor device. A substrate layer is coupled to the semiconductor device stack such that the first electrode is positioned between the substrate layer and the wide bandgap semiconductor device. The substrate layer includes a substrate inlet port and a substrate outlet port. An integrated fluid channel system extends between the substrate inlet and outlet ports and includes a substrate fluid inlet channel extending from the substrate inlet port into the substrate layer, a substrate fluid outlet channel extending from the substrate outlet port into the substrate layer, and one or more semiconductor fluid channels extending into the wide bandgap semiconductor device in fluid communication with the substrate fluid inlet and outlet channels.


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