The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 10, 2018

Filed:

Jun. 19, 2017
Applicant:

Seagate Technology Llc, Cupertino, CA (US);

Inventors:

Yu Cai, San Jose, CA (US);

Yunxiang Wu, Cupertino, CA (US);

Erich F. Haratsch, San Jose, CA (US);

Assignee:

SEAGATE TECHNOLOGY LLC, Cupertino, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 29/02 (2006.01); G11C 29/50 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3427 (2013.01); G11C 16/349 (2013.01); G11C 16/3418 (2013.01); G11C 29/021 (2013.01); G11C 29/028 (2013.01); G11C 29/50004 (2013.01);
Abstract

Systems and methods relating generally to data processing, and more particularly to systems and methods for characterizing a solid state memory. In one embodiment, the systems and methods may include programming a first cell of a solid state memory device to a first voltage, programming a second cell of the solid state memory device to a second voltage different than the first voltage, detecting a voltage shift in the first cell when the second cell is being programmed; characterizing the first voltage of the first cell offset by the voltage shift as an interim voltage of the first cell, and repeatedly reading the interim voltage of the first cell using a first set of incrementally adjusted voltage values until an output of the first cell changes.


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