The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 10, 2018

Filed:

Jan. 23, 2017
Applicant:

Toshiba Memory Corporation, Tokyo, JP;

Inventors:

Naomi Shida, Tokyo, JP;

Kenji Todori, Yokohama, JP;

Shigehiko Mori, Kawasaki, JP;

Reiko Yoshimura, Kawasaki, JP;

Hiroyuki Kashiwagi, Fujisawa, JP;

Ikuo Yoneda, Yokohama, JP;

Tsukasa Tada, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/38 (2012.01); G03F 7/20 (2006.01); G03F 1/76 (2012.01); H01L 21/308 (2006.01); H01L 21/3065 (2006.01); G03F 7/16 (2006.01); G03F 7/40 (2006.01);
U.S. Cl.
CPC ...
G03F 1/76 (2013.01); G03F 7/16 (2013.01); G03F 7/201 (2013.01); G03F 7/40 (2013.01); H01L 21/3065 (2013.01); H01L 21/3086 (2013.01);
Abstract

A near-field exposure mask according to an embodiment includes: a substrate; a concave-convex structure having convexities and concavities and formed on one surface of the substrate; a near-field light generating film arranged at least on a tip portion of each of the convexities, the near-field light generating film being a layer containing at least one element selected from the group consisting of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a film stack formed with layers made of some of those materials; and a resin filled in each of the concavities.


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