Kill die subroutine at probe for reducing parametric failing devices at package test

Abstract

A method of testing semiconductor devices includes contacting bond pads coupled to integrated circuitry on a first die of a plurality of interconnected die on a substrate using a probe system having probes and probe tests including parametric tests, continuity tests, and a kill die subroutine. Probe tests using the probe program are performed. Die are binned into a first bin (Bindie) for being a good die for all probe tests, or a second bin (Bindie) for failing at least one of continuity tests and parametric tests. The Bindie are divided into a first sub-group that failed the continuity tests and a second sub-group that do not fail the continuity tests. A kill die subroutine is triggered including applying power sufficient to selectively cause damage to the second sub-group of Bindie to generate a continuity failure and thus generate kill die.