The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 10, 2018

Filed:

Sep. 16, 2015
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Yanxiang Liu, Glenville, NY (US);

Haining Yang, San Diego, CA (US);

Kern Rim, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01K 7/01 (2006.01); H01L 27/092 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
G01K 7/015 (2013.01); H01L 27/0924 (2013.01); H01L 29/78606 (2013.01);
Abstract

A device includes a source contact, a drain contact, a gate contact, and a body contact. The body contact is electrically coupled to a temperature sensing circuit. The source contact, the drain contact, the gate contact, and the body contact are included in a fin field-effect transistor (finFET).


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