The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2018
Filed:
May. 30, 2017
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Shin-Cheng Lin, Tainan, TW;
Yu-Hao Ho, Keelung, TW;
Wen-Hsin Lin, Jhubei, TW;
Cheng-Tsung Wu, Taipei, TW;
Manoj Kumar, Jharkhand, IN;
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION, Hsinchu, TW;
Abstract
A semiconductor device includes a semiconductor substrate having a first conductivity type, and a first well region disposed in the semiconductor substrate, wherein the first well region has a second conductivity type opposite to the first conductivity type. The semiconductor device also includes a buried layer disposed in the semiconductor substrate and under the first well region, wherein the buried layer has the first conductivity type and is in contact with the first well region. The semiconductor device further includes a source electrode, a drain electrode and a gate structure disposed on the semiconductor substrate, wherein the gate structure is located between the source electrode and the drain electrode.