The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2018
Filed:
Nov. 25, 2016
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Seung Min Song, Yongin-si, KR;
Dong Chan Suh, Suwon-si, KR;
Jung Gil Yang, Suwon-si, KR;
Geum Jong Bae, Suwon-si, KR;
Woo Bin Song, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;
Abstract
A method of manufacturing semiconductor device includes forming a plurality of sacrificial layers and a plurality of semiconductor layers repeatedly and alternately stacked on a substrate, partially removing the sacrificial layers, forming spacers in removed regions of the sacrificial layers, and replacing remaining portions of the sacrificial layers with a gate electrode. Each of the sacrificial layers includes first portions disposed adjacent to the plurality of semiconductor layers and a second portions disposed between the first portions. The second portion having a different composition from the first portions.