The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2018
Filed:
Jan. 18, 2017
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Nicolas Posseme, Sassenage, FR;
Christian Arvet, Bernin, FR;
Abstract
There is provided a method for manufacturing a transistor including a gate above an underlying layer of a semiconductor material and including at least one first flank and one second flank, a gate foot formed in the underlying layer, a peripheral portion of the underlying layer surrounding the gate foot, and spacers covering at least partially the first and second flanks so as to not cover the gate foot; the method including forming the underlying layer by partially removing the semiconductor material around the gate to form the gate foot and the peripheral portion; then forming a dielectric layer for forming spacers by a deposition to cover both the first and second flanks, the gate foot, and an upper surface of the peripheral portion; and then partially removing the dielectric layer so as to expose the upper surface and so as to not expose the first and second flanks.