The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2018
Filed:
Dec. 17, 2014
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Jens Peter Konrath, Villach, AT;
Hans-Joachim Schulze, Taufkirchen, DE;
Reinhold Schoerner, Grossenseebach, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/47 (2006.01); H01L 29/872 (2006.01); H01L 29/66 (2006.01); H01L 21/285 (2006.01); H01L 21/04 (2006.01); H01L 29/06 (2006.01); H01L 21/3215 (2006.01); H01L 21/02 (2006.01); H01L 21/223 (2006.01); H01L 21/266 (2006.01); H01L 21/268 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01L 29/22 (2006.01);
U.S. Cl.
CPC ...
H01L 29/47 (2013.01); H01L 21/0495 (2013.01); H01L 21/28537 (2013.01); H01L 21/28581 (2013.01); H01L 21/3215 (2013.01); H01L 29/0619 (2013.01); H01L 29/475 (2013.01); H01L 29/6606 (2013.01); H01L 29/66143 (2013.01); H01L 29/872 (2013.01); H01L 29/1602 (2013.01); H01L 29/1608 (2013.01); H01L 29/20 (2013.01); H01L 29/2003 (2013.01); H01L 29/22 (2013.01);
Abstract
A method of manufacturing a semiconductor device includes introducing nitrogen into a metal layer or into a metal nitride layer, the metal layer or metal nitride layer being formed in contact with a semiconductor material. A semiconductor device includes a semiconductor material and a metal nitride layer in contact with the semiconductor material. The metal nitride has a nitrogen content larger than a solubility limit of nitrogen in the metal nitride.