The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2018
Filed:
Feb. 01, 2017
Super Group Semiconductor Co., Ltd., Hsinchu County, TW;
Sung-Nien Tang, Hsinchu County, TW;
Ho-Tai Chen, Hsinchu County, TW;
Hsiu-Wen Hsu, Hsinchu County, TW;
SUPER GROUP SEMICONDUCTOR CO., LTD., Hsinchu County, TW;
Abstract
A super junction semiconductor device is provided. The super-junction semiconductor device includes a substrate, a drift layer disposed on the substrate, an insulating layer, a lightly-doped region, and a main loop-shaped field plate. The drift layer includes a plurality of n- and p-type doped regions alternately arranged in parallel to form a super-junction structure, and defines a cell region and a termination region surrounding the cell region. The lightly-doped region is formed in the drift layer and connected to a surface of the drift layer. The lightly-doped region has a first end portion closer to the cell region and a second end portion farther away from the cell region. The insulating layer disposed on the drift layer covers the termination region. The main loop-shaped field plate is disposed on the insulating layer and covers the second end portion.