The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2018
Filed:
Jun. 30, 2017
United Microelectronics Corp., Hsin-Chu, TW;
Yuan-Heng Tseng, Pingtung County, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method for operating a memory cell structure includes providing a memory cell. An erasing process is performed by applying an erasing voltage to a first gate electrode, a source region and a drain region simultaneously to attract a plurality of electrons from a substrate and to store the plurality of electrons in a first spacer and a second spacer. Afterwards, a programming process is performed by applying a pull-out voltage to the source region or the drain region to remove the plurality of electrons stored in the first spacer or the second spacer, and a read process is performed to determine whether the plurality of electrons is stored in the first spacer and stored in the second spacer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile