The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 03, 2018

Filed:

Feb. 09, 2016
Applicant:

Advanced Semiconductor Engineering, Inc., Kaohsiung, TW;

Inventors:

Sheng-Chi Hsieh, Kaohsiung, TW;

Chih-Pin Hung, Kaohsiung, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01F 27/28 (2006.01); H01F 5/00 (2006.01); H01F 17/00 (2006.01); H01L 23/522 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5227 (2013.01); H01L 23/49822 (2013.01);
Abstract

A semiconductor device includes a substrate and at least one inductor on the substrate. The inductor includes top portions separated from one another, bottom portions separated from one another, and side portions separated from one other. Each side portion extends between one of the top portions and one of the bottom portions. A semiconductor device includes a substrate, a first patterned conductive layer on the substrate, a second patterned conductive layer, and at least one dielectric layer between the first patterned conductive layer and the second patterned conductive layer. The first patterned conductive layer defines bottom crossbars separated from each other, each bottom crossbar including a bend angle. The second patterned conductive layer defines top crossbars separated from each other, wherein each top crossbar is electrically connected to a bottom crossbar.


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