The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2018
Filed:
Aug. 21, 2017
Globalfoundries Inc., Grand Cayman, KY;
Neal A. Makela, Saratoga Springs, NY (US);
Vimal K. Kamineni, Mechanicville, NY (US);
Pei Liu, Clifton Park, NY (US);
Chih-Chiang Chang, Clifton Park, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
A structure and method for forming a tungsten region for a replacement metal gate (RMG). The method for forming the tungsten region may include, among other things, forming a first tungsten region i.e., tungsten seed layer, on a liner in a trench of a dielectric layer; removing a portion of the liner and the tungsten seed layer to expose an uppermost surface of a work function metal (WFM) layer wherein an uppermost surface of the liner and tungsten seed layer is positioned below an uppermost surface of the dielectric layer; and forming a second tungsten region from the tungsten seed layer. The tungsten region may be formed to contact the uppermost surface liner, the uppermost surface of WFM layer, and/or the sidewalls of the trench. The tungsten region may include a single crystallographic orientation. The tungsten region may also include an uppermost surface with a substantially arcuate cross-sectional geometry.