The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2018
Filed:
Oct. 28, 2015
Osaka University, Suita-shi, Osaka, JP;
Itochu Plastics Inc., Tokyo, JP;
National University Corporation Tokyo University of Agriculture and Technology, Fuchu-shi, Tokyo, JP;
Yusuke Mori, Osaka, JP;
Masashi Yoshimura, Osaka, JP;
Mamoru Imade, Osaka, JP;
Masashi Isemura, Tokyo, JP;
Akinori Koukitu, Tokyo, JP;
Osaka University, Osaka, JP;
Itochu Plastics Inc., Tokyo, JP;
National University Corporation Tokyo University of Agriculture and Technology, Tokyo, JP;
Abstract
To provide a method for producing a Group III element nitride crystal by growing it on a plane on the −c-plane side as a crystal growth plane. The present invention is a method for producing a Group III element nitride crystal, including a vapor phase growth step of growing a Group III element nitride crystalon a crystal growth plane of a Group III element nitride seed crystalby vapor deposition. The vapor phase growth step is a step of causing a Group III metal, an oxidant, and a nitrogen-containing gas to react with one another to grow the Group III element nitride crystalor includes: a reduced product gas generation step of causing a Group III element oxide and a reducing gas to react with each other to generate a gas of a reduced product of the Group III element oxide; and a crystal generation step of causing the gas of the reduced product and a nitrogen-containing gas to react with each other to generate the Group III element nitride crystal. The crystal growth plane is a plane on the −c-plane side. A crystal growth temperature is 1200° C. or more. In the vapor phase growth step, the Group III element nitride crystal is grown in an approximately −c direction.