The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2018
Filed:
Feb. 23, 2011
Bahman Hekmatshoar-tabari, Mount Kisco, NY (US);
Ali Khakifirooz, Mountain View, CA (US);
Alexander Reznicek, Mount Kisco, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
Ghavam G. Shahidi, Pound Ridge, NY (US);
Davood Shahrjerdi, Ossining, NY (US);
Bahman Hekmatshoar-Tabari, Mount Kisco, NY (US);
Ali Khakifirooz, Mountain View, CA (US);
Alexander Reznicek, Mount Kisco, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
Ghavam G. Shahidi, Pound Ridge, NY (US);
Davood Shahrjerdi, Ossining, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
An epitaxy method includes providing an exposed crystalline region of a substrate material. Silicon is epitaxially deposited on the substrate material in a low temperature process wherein a deposition temperature is less than 500 degrees Celsius. A source gas is diluted with a dilution gas with a gas ratio of dilution gas to source gas of less than 1000.