The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 26, 2018

Filed:

Nov. 07, 2017
Applicant:

Elite Semiconductor Memory Technology Inc., Hsinchu, TW;

Inventor:

Yao-Wei Yang, Changhua County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G05F 1/10 (2006.01); H02M 3/157 (2006.01); H03K 5/12 (2006.01); H02M 3/158 (2006.01); H03K 17/687 (2006.01); H03K 5/08 (2006.01);
U.S. Cl.
CPC ...
H02M 3/157 (2013.01); H02M 3/158 (2013.01); H03K 5/08 (2013.01); H03K 5/12 (2013.01); H03K 17/6871 (2013.01);
Abstract

A bootstrap circuit applied to a first transistor of a direct-current (DC) to DC converter includes a second transistor, a bootstrapping capacitor and a clamping circuit, wherein the bootstrapping capacitor has a first terminal and a second terminal, and the first terminal is coupled to a source terminal of a transistor, and the source terminal of the second transistor is coupled to the first transistor; and the clamping circuit is coupled between a gate terminal of the second transistor and the second terminal of the bootstrapping capacitor, and is arranged to maintain a voltage drop between the second terminal of the bootstrapping capacitor and the gate terminal of the second transistor. A drain terminal of the second transistor is coupled to a first reference voltage, and a maximum of a voltage level of the gate terminal of the first transistor is greater than the first reference voltage.


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